Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs (2024)

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Volume 94, Issue 18

4 May 2009

Research Article| May 04 2009

T. M. Lu;

T. M. Lu a)

1Department of Electrical Engineering,

Princeton University

, Princeton, New Jersey 08544,

USA

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D. C. Tsui;

D. C. Tsui

1Department of Electrical Engineering,

Princeton University

, Princeton, New Jersey 08544,

USA

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C.-H. Lee;

C.-H. Lee

2Department of Electrical Engineering and Graduate Institute of Electronics Engineering,

National Taiwan University

, Taipei 106,

Taiwan

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C. W. Liu

C. W. Liu

3Department of Electrical Engineering and Graduate Institute of Electronics Engineering,

National Taiwan University

, Taipei 106,

Taiwan

and

National Nano Device Laboratories

, Hsinchu 300,

Taiwan

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Author & Article Information

a)

Electronic mail: tmlu@princeton.edu.

Appl. Phys. Lett. 94, 182102 (2009)

Article history

Received:

February 23 2009

Accepted:

April 08 2009

Connected Content

A correction has been published: Erratum: “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/V s” [Appl. Phys. Lett. 94, 182102 (2009)]

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Citation

T. M. Lu, D. C. Tsui, C.-H. Lee, C. W. Liu; Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106cm2/Vs. Appl. Phys. Lett. 4 May 2009; 94 (18): 182102. https://doi.org/10.1063/1.3127516

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We report the observation of a two-dimensional electron gas (2DEG) in a Si quantum well with mobility 1.6×106cm2/Vs at carrier densities n1.5×1011/cm2. The 2DEG, which resides in an undoped Si/SiGe heterostructure, is capacitively induced using an insulated-gate field-effect transistor (IGFET) device structure; its mobility is determined from transport and quantum Hall effect measurements at 0.3 K. Our IGFET device makes it now possible to access by transport experiments the low electron density regime down to n1×1010/cm2.

Topics

Electronic transport, Quantum oscillations, Electrical properties and parameters, Field effect transistors, Photolithography, Quantum Hall effect, Quantum wells, Two-dimensional electron gas, Si/SiGe heterostructure, Magnetic fields

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© 2009 American Institute of Physics.

2009

American Institute of Physics

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